Negative photoresist alkaline water for existence
The photoresist is intended to implement photolithographic processes with subsequent galvanic deposition of metals in the manufacture of integrated circuits, printed microplate, electroharmonix Sith, and in other areas where methods used precision photolithography and electroforming. The photoresist is made on the basis of copolymers of methacrylic number.
The formation of a film on the substrate is carried out by centrifugation or by immersion in a solution. High quality formed in the photoresist relief is achieved as a result of the drying and light curing of the exposed areas.
To ensure light curing photoresist film before exposure is covered by the protective layer protecting against the access of oxygen. Apply a protective layer by immersion in a solution or irrigation.
The photoresist feature is the vertical profile of the existence of any thickness. Produced the photoresist, producing films with a thickness of from 5 μm to 400 μm.
Technical data photoresist
|Appearance||viscous transparent liquid pink or blue color|
|Kinematic viscosity, mm g/c|
|Typical film thickness, microns||NF-5-10|
|Developer||2% solution of sodium carbonate|
|The conditions of drying of the photoresist||60 - 80°C, 20 - 30 min.|
|The conditions of drying of the protective layer||20 - 30°C until dry.|
|Spectral sensitivity, nm||330 - 410|
|The resolution of the photoresist thickness
5 - 10 µm
25 - 27 µm
15 - 20 µm
|Temperature resistance manifested of relief (no distortion of the size of elements)||up to 170 - 180°C|